3 edition of Narrow gap semiconductors found in the catalog.
Narrow gap semiconductors
Published
1992
by A. Hilger in Bristol, England, Philadelphia
.
Written in English
Edition Notes
| Statement | edited by S. Lovold and J.B. Mullin. |
| Contributions | Lovold, S., Mullin, J. B., North Atlantic Treaty Organization. |
| Classifications | |
|---|---|
| LC Classifications | QC611.8.N35 N32 1992 |
| The Physical Object | |
| Pagination | 136 p. : |
| Number of Pages | 136 |
| ID Numbers | |
| Open Library | OL1704708M |
| ISBN 10 | 0750301589 |
| LC Control Number | 92005959 |
Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. Device Physics of Narrow Gap Semiconductors, a forthcoming second book, offers descriptions of the materials science and device physics of these unique materials. Topics covered include impurities and defects, recombination Brand: Springer New York. Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. Device Physics of Narrow Gap Semiconductors, a forthcoming second book, offers descriptions of the materials science and device physics of these unique materials. Topics covered include impurities and defects, recombination Brand: Springer New York.
Festkörperprobleme () Narrow bandgap semiconductors Christian Vérié Laboratoire de Magnétisme et de Physique des Solides, C.N. R.S., 1, place A. Briand (92) Meudon-Bellevue (France) Summary: The main band structure features of various narrow bandgap semiconductor families are by: 4. Narrow Gap Semiconductors contains the invited and contributed papers presented at the Seventh International Conference on Narrow Gap Semiconductors, held in January The invited review papers provide an overview and the contributed papers provide in-depth coverage of research results across the whole field.
Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. This book offers clear descriptions of crystal growth and the fundamental structure and properties of these unique materials. only the fundamental science of narrow-gap semiconductors but also to the technology of infrared optical electronics. There have been several books published in this field over the past few decades. In , a British scientist, D.R. Lovett, published a book Semimetals and Narrow-Band Gap Semiconductors (Pion Limited, London).
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Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. Device Physics of Narrow Gap Semiconductors, a forthcoming second book, offers descriptions of the materials science and device physics of these unique materials.
Topics covered include impurities and defects, recombination mechanisms, surface Cited by: Narrow Gap Semiconductors 1st Edition by S. Shen (Editor), D.
Tang (Editor), G. Zheng (Editor), & ISBN ISBN Why is ISBN important. ISBN. This bar-code number lets you verify that you're getting exactly the right version or edition of a book. Narrow-Gap Semiconductors (Springer Tracts in Modern Physics (98)) Softcover reprint of the original 1st ed.
EditionCited by: Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems.
Device Physics of Narrow Gap Semiconductors, a forthcoming second book, offers descriptions of the materials science and device physics of these unique materials. Topics covered include impurities and defects, recombination mechanisms, surface 1/5(1).
Physics of Narrow Gap Semiconductors (Lecture Notes in Physics) by E. Gornik (Author) ISBN ISBN Why is ISBN important. ISBN. This bar-code number lets you verify that you're getting exactly the right version or edition of a book. Cited by: Narrow Gap Semiconductors Physics and Applications Book Subtitle Proceedings of the International Summer School Held in Nîmes, France, September 3 – 15, About this book.
Narrow gap semiconductors obey the general rules of semiconductor science, but often exhibit extreme features of these rules because of the same properties that produce their narrow gaps. Consequently, these materials provide sensitive tests of theory, and the opportunity for the design of innovative devices.
Narrow-Gap Semiconductors. Authors; Ralf Dornhaus; Günter Nimtz; Burghard Schlicht; Book. Citations; Downloads; Part of the Springer Tracts in Modern Physics book series (STMP, volume 98) Log in to check access. Buy eBook. USD Narrow-Gap-Halbleiter semiconductor. Bibliographic information.
DOI https. At present, HgCdTe is the most widely used variable-gap semiconductor for IR photodetectors. Several reviews and monographs on narrow-gap semiconductors have previously been published.
One of the well-known monographs is Narrow-Gap Semiconductors by R. Dornhaus, G. Nimtz, and B. Schlicht, Springer-Verlag, Berlin (). 15 rows Narrow-gap semiconductors are semiconducting materials with a band gap that is.
Narrow gap semiconductors have provided an exciting field of research and show a number of extreme physical and material characteristics. They are the established material systems for infrared detectors and emitters, and with new developments in the technology these materials are emerging as a viable route to high speed, low power electronics.
Narrow gap semiconductors obey the general rules of semiconductor science, but often exhibit extreme features of these rules because of the same properties that produce their narrow gaps.
Consequently these materials provide sensitive tests of theory, and the opportunity for the design of innovative devices. Continuing the high-quality tradition of this series, Narrow Gap Semiconductors covers all aspects of NGS to offer an authoritative, well-balanced perspective of this evolving.
The book also deals with the physics and applications of low-energy phenomena at the infrared and terahertz ranges. Continuing the high-quality tradition of this series, Narrow Gap Semiconductors covers all aspects of NGS to offer an authoritative, well-balanced perspective of this evolving field.
Physics of Narrow Gap Semiconductors Proceedings of the 4th International Conference on Physics of Narrow Gap Semiconductors Held at Linz, Austria, September 14–17, The main band structure features of various narrow bandgap semiconductor families are reviewed.
A qualitative first principle discussion is reported, indicating the impact of relativistic corrections. As an example, a particular emphasis is stressed about the semimetal-semiconductor transition in Cd x Hg 1−x Te alloys.
Some techniques used in the characterization of extremely Cited by: 4. The ideal TI is a band insulator where the Fermi level is in the bulk band gap, and any conduction must take place solely through the topological surface states, roughly like a baked potato wrapped in aluminum foil.
The canonical 3D TI materials are narrow band gap semiconductors Bi2 Se 3, Bi 2 Te 3, Sb 2 Te 3. Narrow gap semiconductors obey the general rules of semiconductor science, but often exhibit extreme features within these rules because of those properties that produce their narrow gaps. Consequently these materials provide sensitive tests of theory, and the opportunity for the design of innovative devices.
Narrow Gap Semiconductors Physics and Applications Proceedings of the International Summer School Held in Nimes, France, September 3 – 15, Search within book. Front Matter. PDF. General introduction.
Leonard Sosnowski. Crystal growth of narrow gap semiconductors theory and techniques. Royer. Pages Bringing together researchers from twenty-five countries, Narrow Gap Semiconductors: Proceedings of the 12th International Conference on Narrow Gap Semiconductors discusses the recent advances and discoveries in the science and technology of narrow gap semiconductors (NGS).
In particular, it explore. Device Physics of Narrow Gap Semiconductors (Microdevices) eBook: Chu, Junhao, Sher, Arden: : Kindle Store1/5(1).The Physics of Semimetals and Narrow Gap Semiconductors by Carter, D.L.
[Ed.] and R.T. [Ed.] Bate: and a great selection of related books, art .Device Physics of Narrow Gap Semiconductors offers descriptions of the materials science and device physics of these unique materials. Topics covered include impurities and defects, recombination mechanisms, surface and interface properties, and the properties of low dimensional systems for infrared applications.
